NSTIC (GaN) was pleased to host NTT Advanced Technology Corporation (NTT-AT) for an insightful exchange focused on the future of GaN technologies in high-frequency systems. The discussion explored opportunities for collaboration in radio frequency power, epitaxial growth, and device prototyping—key areas driving the next generation of wireless communication and mmWave innovation.

A Shared Focus on GaN Epitaxial Growth for RF Systems

The session centred on GaN epitaxial growth, a critical foundation for high-performance RF and mmWave applications. As wireless networks evolve and demand faster, more efficient signal transmission, high-quality GaN materials are essential to achieving superior device performance and scalability.

NTT-AT, a global leader in GaN materials research and production, shared insights into its expertise in delivering high-purity epitaxial wafers engineered for precision and reliability. NSTIC (GaN) highlighted ongoing work in RF and mmWave device prototyping, emphasising how material quality directly influences performance in radio frequency power and high-efficiency systems.

Exploring Research Collaboration and Technical Synergy

The visit provided an opportunity for both teams to exchange technical perspectives and identify future areas of collaboration. Discussions focused on how coordinated efforts can accelerate GaN adoption in applications such as 5G infrastructure, radar systems, satellite communications, and high-speed wireless connectivity.

Key topics included:

• Optimising GaN epitaxial growth for improved thermal and electrical stability

• Addressing defect control and material uniformity for scalable production

• Integrating epitaxial wafers into NSTIC (GaN)’s RF device design and testing workflows

• Co-developing prototypes to validate real-world system performance

These dialogues reflected a shared commitment to bridging fundamental research with industrial application—an essential step in  advancing radio frequency power technologies for next-generation communications.

Aligning Strengths for Future Innovation

The discussions underscored a strong alignment of vision and technical strengths between NTT-AT and NSTIC (GaN). As GaN continues to redefine high-frequency and high-power design, partnerships like this play a pivotal role in translating advanced materials research into commercial-scale impact.

For NSTIC (GaN), this collaboration represents more than technical synergy. It embodies a shared dedication to solving real-world connectivity challenges, improving energy efficiency, and enabling sustainable progress across global wireless ecosystems.

Looking Ahead

NSTIC (GaN) extends its appreciation to Ms Kumiko Sudo, Mr Masao Tomohiro, and Mr Oh Jing Xuan for their visit and thoughtful engagement. The exchange of ideas during this session has set a strong foundation for deeper collaboration and co-development.

Moving forward, NSTIC (GaN) looks to expand research engagement with NTT-AT through focused studies, joint experiments, and knowledge-sharing initiatives. Together, both teams aim to advance the performance, reliability, and scalability of GaN technologies in high-frequency systems.

Stay Connected

NSTIC (GaN) remains committed to driving innovation in radio frequency power and mmWave applications through global partnerships that link research excellence with practical industry outcomes. We welcome further collaboration with international leaders like NTT-AT to co-create the next generation of high-frequency solutions.

Together, we are shaping the future of communications, one breakthrough at a time.