JOURNAL

GaN-on-Si HEMT Technology for mm-Wave Mobile T/R Modules Demonstrating Concurrent High Efficiency (>60 %) and Low Noise (<1.2 dB)

Discover the state-of-the-art performance for GaN-on-Si devices in high-frequency mobile applications.

NSTIC (GaN)
  • 22 Jan 2026
  • 3 min read

MAGAZINE

The Next Leap Beyond Silicon: Rethinking Leadership for the GaN Age

Insights from Prof Ng Geok Ing on the shifts driving the GaN era and the capabilities needed for the next phase of semiconductor advancement.

NSTIC (GaN)
  • 25 Nov 2025
  • 3 min read

CONFERENCE

High-Power and Low-Noise AlN/GaN/AlGaN-on-Si HEMT Technology for Low-Voltage mm-Wave Monolithically Integrated Mobile Front-End

Advancing GaN-on-Si technology for high-performance mm-wave mobile systems.

NSTIC (GaN)
  • 24 Sep 2025
  • 3 min read

JOURNAL

GaN-on-Si HEMT for D-Band Power Amplification Demonstrating 0.67 W/mm at 10 V

Explore how GaN-on-Si innovation is shaping next-generation D-band power amplification.

NSTIC (GaN)
  • 21 Jul 2025
  • 3 min read

CONFERENCE

RF–Millimetre-Wave GaN-on-Si Electronics for Future 5G/6G Communications

Advancing GaN-on-Si innovation to power the 5G and 6G era.

NSTIC (GaN)
  • 12 Jul 2025
  • 3 min read

CONFERENCE

High-Performance Ka-Band AlN/GaN MIS-HEMTs with Ultra-Low Noise Characteristics for Next-Generation Communication Systems

Pioneering ultra-low-noise GaN technology for next-generation Ka-band communications.

NSTIC (GaN)
  • 12 Jul 2025
  • 3 min read

CONFERENCE

Aggressive Vertical Scaling of AlN/GaN/AlGaN HEMTs-on-Si with 80 nm Thin GaN Channel Layer: Investigation of CW vs. Pulsed Performance

Scaling GaN-on-Si HEMTs for efficient, high-frequency power performance.

NSTIC (GaN)
  • 12 Jul 2025
  • 3 min read

CONFERENCE

Ultra-Wide VTH Tuning of D/E-Mode GaN MIS-HEMTs on Silicon via Passivation Engineering of 1.3 nm Ultra-Thin AlN Barrier

Engineering ultra-thin AlN barriers to unlock GaN-on-Si flexibility.

NSTIC (GaN)
  • 12 Jul 2025
  • 3 min read

CONFERENCE

RF GaN-on-Si Electronics: Advancing Technology Frontiers and Bringing from Lab to Fab

Bridging GaN-on-Si innovation from research breakthroughs to real-world fabrication.

NSTIC (GaN)
  • 13 Jun 2025
  • 3 min read

JOURNAL

Trapping Effect in AlN/GaN/AlGaN High-Electron-Mobility Transistors Revealed by Tristate Pulse IV Technique

Uncovering trapping dynamics to improve GaN-on-Si HEMT reliability.

NSTIC (GaN)
  • 21 May 2025
  • 3 min read

JOURNAL

Improved Device Performance in In Situ SiNₓ/AlN/GaN MIS-HEMTs with Ex Situ Al₂O₃ Passivation at Elevated Temperatures

Enhancing GaN MIS-HEMT reliability through advanced thermal passivation design.

NSTIC (GaN)
  • 17 Mar 2025
  • 3 min read

CONFERENCE

Radio-Frequency GaN-on-Si HEMT Technology for Future Communication Applications (Invited)

Explore how GaN-on-Si advancements are powering the future communication systems

NSTIC (GaN)
  • 05 Mar 2025
  • 3 min read

JOURNAL

Analysis of Leakage Channel with Different Aluminium Composition Back Barriers in AlN/GaN High-Electron-Mobility Transistors on Silicon

Advancing GaN-on-Si design through back-barrier composition optimisation.

NSTIC (GaN)
  • 10 Feb 2025
  • 3 min read

JOURNAL

Multi-channel AlN/GaN Schottky Barrier Diodes

Explore multi-channel AlN/GaN diodes for efficient power and RF.

NSTIC (GaN)
  • 08 Jan 2025
  • 3 min read

CONFERENCE

Low-Voltage AlN/GaN/AlGaN-on-Si MISHEMT with Record Pout of 1.7 W/mm at 30 GHz

Pushing GaN-on-Si MISHEMT performance for future 5G power systems.

NSTIC (GaN)
  • 29 Nov 2024
  • 3 min read

CONFERENCE

First Demonstration of Schottky Barrier Diodes in Multi-Channel AlN/GaN Heterostructures

Exploring multi-channel AlN/GaN diodes for next-generation power electronics.

NSTIC (GaN)
  • 28 Nov 2024
  • 3 min read

CONFERENCE

First Demonstration of GaN-on-Si HEMT for D-Band Power Amplification

Advancing GaN-on-Si innovation for next-generation D-band communications.

NSTIC (GaN)
  • 27 Nov 2024
  • 3 min read

CONFERENCE

Analysis of Leakage Channel with Different Aluminium Composition Back-Barrier in AlN/GaN High-Electron-Mobility Transistors on Silicon

Enhancing GaN-on-Si device reliability through back-barrier engineering.

NSTIC (GaN)
  • 26 Nov 2024
  • 3 min read

CONFERENCE

Characterisation of Deep Region Trapping Effects in AlN/GaN HEMTs with an AlGaN Back Barrier Utilising Tri-State Pulsed IV Technique

Understanding deep trapping to enhance GaN HEMT reliability.

NSTIC (GaN)
  • 25 Nov 2024
  • 3 min read

JOURNAL

AlN/GaN/AlGaN-on-Si HEMT Achieving 1.3 W/mm at 5 V for 5G FR2 Handsets

Explore how GaN-on-Si is powering the future of 5G.

NSTIC (GaN)
  • 21 Oct 2024
  • 3 min read

JOURNAL

Variable Range Hopping-Assisted Parasitic Channel Leakage in AlN/GaN/AlGaN HEMTs on Si

Discover how GaN-on-Si innovation enhances device reliability

NSTIC (GaN)
  • 11 Jul 2024
  • 3 min read

CONFERENCE

High-Al-Composition Al₀.₆₅Ga₀.₃₅N/GaN-on-Si MISHEMTs Fabricated with CMOS-Compatible Metallisation for mm-Wave Application

Driving CMOS-compatible GaN-on-Si innovation for next-generation mm-wave systems.

NSTIC (GaN)
  • 18 Nov 2023
  • 3 min read