Type: Conference Paper
Date Presented: 12-17 November 2023
Author(s): H. Xie et al.
Conference: 14th International Conference on Nitride Semiconductors (ICNS)

Abstract:

The future of semiconductor manufacturing relies on developing cost-effective millimeter-wave (mm-wave) electronics. This paper presents the development of high-aluminum-content Al₀.₆₅Ga₀.₃₅N/GaN-on-Si metal–insulator–semiconductor high-electron-mobility transistors (MISHEMTs). Specifically, the research explores device fabrication using CMOS-compatible metallisation processes. These methods are designed to enhance breakdown performance, leakage control, and overall device reliability. Notably, the integration of GaN-on-Si structures on silicon substrates remains a key priority for the industry.

Through process and material optimisation, the study demonstrates improved current handling and scalability. This is particularly significant for high-frequency and high-power operations. As a result, these findings provide valuable insight into making mm-wave electronics more manufacturable. The study supports the growth of semiconductor manufacturing for next-generation telecommunications. This work highlights progress in scaling advanced foundry processes and promoting innovation in Singapore.

In conclusion, the results prove that high-Al-composition barriers can be integrated into standard foundry workflows. This compatibility is essential for lowering the cost of high-performance RF systems. This work aligns with the innovation mission of NSTIC (GaN) and our commercial foundry services in Singapore.

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