Type: Conference Paper
Date Presented: November 2024
Author(s): S. Liu et al.
Conference: 12th International Workshop on Nitride Semiconductors (IWN)

Abstract:

The semiconductor manufacturing process for GaN-on-Si devices requires precise engineering to mitigate parasitic leakage channels. This paper investigates how aluminium composition in the back-barrier layer influences the leakage characteristics of AlN/GaN high-electron-mobility transistors (HEMTs). Specifically, the study compares devices with varied back-barrier configurations to determine their impact on carrier confinement. By systematically analyzing these material variations, the research identifies the specific pathways where leakage occurs.

Notably, the results demonstrate that back-barrier engineering is essential for suppressing buffer-related current paths. Furthermore, these findings provide a roadmap for structural designs that achieve higher stability and efficiency during the fabrication stage. As a result, this work provides actionable data for an improved semiconductor manufacturing process targeting advanced power and RF electronics. Consequently, the study improves our understanding of barrier engineering in high-frequency heterostructures. In conclusion, the findings presented at IWN 2024 by S. Liu et al. underscore the commitment of NSTIC (GaN) to pioneering research and innovation in Singapore.

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