Type: Conference Paper
Date Presented: November 2024
Author(s): H. Li et al.
Conference: 12th International Workshop on Nitride Semiconductors (IWN)

Abstract:

Power electronics systems are currently evolving to meet the demands of higher energy density and efficiency through the use of multi-channel architectures. This paper presents the first demonstration of Schottky barrier diodes (SBDs) developed using multi-channel AlN/GaN heterostructures. Specifically, the study focuses on material and device design strategies aimed at improving current conduction, breakdown performance, and uniformity across stacked channel layers. By integrating these multi-channel layers, the research seeks to overcome the current density limitations of conventional lateral GaN diodes.

Notably, the experimental analysis reveals how these stacked architectures enhance carrier transport and optimize electric field distribution. Furthermore, the structural optimisation of the AlN/GaN interface has shown significant potential for improving device reliability under high-voltage conditions. As a result, these findings provide a roadmap for engineering high-performance GaN diodes that can be scaled for mass production. Consequently, this work represents a major contribution to the scalability of wide-bandgap power electronics for both industrial and RF applications. In conclusion, the results presented at IWN 2024 by H. Li et al. support the advanced research goals of NSTIC (GaN) and our commercial foundry services.

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