Type: Conference Presentation
Date Presented: 8-12 June 2025
Author(s): Geok Ing Ng
Conference: Symposium of VLSI Technology and Circuits (Workshop)

Abstract:

The industrial adoption of RF GaN-on-Si electronics depends on bridging the gap between research and manufacturability. This invited presentation at the Symposium of VLSI Technology and Circuits explores this transition. Professor Ng Geok Ing discusses recent progress in high-frequency device performance. The talk focuses on advancements in epitaxial growth and process compatibility. These efforts help move laboratory-scale prototypes into production-ready solutions.

Scaling RF GaN-on-Si electronics requires overcoming challenges in cost and performance uniformity. The presentation outlines a roadmap for supporting next-generation 5G, radar, and power systems. It highlights the importance of maintaining high linearity while using large silicon substrates. Furthermore, the work underscores the need for collaboration between academia and industry. This partnership accelerates the transition of GaN innovations into practical deployment.

In conclusion, the insights provided illustrate the maturing nature of RF GaN-on-Si electronics. Moving from the lab to the fab ensures that high-performance RF technology is commercially viable. This research aligns with the innovation mission of NSTIC (GaN) and our commercial foundry services in Singapore.

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