The National Semiconductor Translation and Innovation Centre for Gallium Nitride (NSTIC GaN) welcomed the Future Systems and Technology Directorate (FSTD) from Singapore’s Ministry of Defence (MINDEF) for a visit focused on advancing collaboration in next-generation semiconductor technologies. Led by DS(T)/FSTA BG Yew Chee Leung, the delegation explored how GaN innovation supports RF systems, high-frequency electronics, and future communication platforms such as 5G and 6G. The session underscored NSTIC (GaN)’s role within Singapore’s deep-tech ecosystem, connecting research, infrastructure, and strategic partners to accelerate national semiconductor development.

Advancing Deep-Tech Collaboration in Singapore

Singapore’s commitment to building a strong deep-tech and semiconductor innovation ecosystem continues to grow through partnerships between research institutions, government agencies, and industry. NSTIC (GaN) serves as a key node within this network, bridging fundamental research with applied innovation in wide-bandgap semiconductor technology.

The visit from the Future Systems and Technology Directorate (FSTD) of the Ministry of Defence reflected this shared commitment. The Directorate’s focus on exploring advanced materials and next-generation systems aligns closely with NSTIC (GaN)’s ongoing mission to translate Gallium Nitride research into high-impact applications that serve both national and global industries.

Understanding the Role of GaN in Future Systems

Gallium Nitride (GaN) is increasingly recognised as a transformative material for modern electronics. Its superior efficiency, power density, and thermal stability make it essential for high-performance RF amplifiers, radar systems, power conversion devices, and next-generation communication technologies.

During the visit, NSTIC (GaN)’s technical team shared insights into ongoing R&D efforts that are shaping the next phase of GaN development. Discussions covered the design and fabrication of GaN-based components for high-frequency and high-power applications, which are crucial building blocks for future systems including 5G, 6G, and beyond.

Highlights from the Visit

Led by DS(T)/FSTA BG Yew Chee Leung, the FSTD delegation was introduced to NSTIC (GaN)’s capabilities, infrastructure, and ongoing research partnerships. The visit included:

• Facility Walk-throughs: showcasing NSTIC (GaN)’s fabrication and characterisation capabilities dedicated to GaN device development

• Technical Demonstrations: featuring recent progress in GaN transistor performance and reliability testing

• Collaborative Discussions: focusing on how GaN technologies can strengthen Singapore’s defence-related R&D and support cross-sector innovation

These exchanges reinforced NSTIC (GaN)’s role as a national platform connecting government agencies, academia, and industry toward shared technological advancement.

Why It Matters for Singapore

Singapore’s semiconductor sector continues to evolve as a key driver of economic resilience and innovation. The government’s focus on advanced manufacturing, materials science, and digital infrastructure has positioned the nation as a strategic hub for next-generation technology development.

NSTIC (GaN)’s work complements this national agenda by cultivating expertise in Gallium Nitride, an area with potential impact across defence, communications, healthcare, and industrial applications. Engagements like the FSTD visit highlight how collaborative R&D efforts can enhance Singapore’s technological sovereignty and accelerate the translation of research into deployable innovation.

Strengthening the Research-to-Application Pipeline

A recurring theme throughout the visit was the importance of building strong translation pathways between early-stage research and real-world applications. NSTIC (GaN)’s ecosystem model supports this by integrating:

• Academic Research Excellence: tapping into the expertise of local universities and global research partners

• Advanced Prototyping Capabilities: enabling proof-of-concept validation through state-of-the-art facilities

• Industry Collaboration: ensuring that R&D outcomes align with commercial and national needs

This collaborative framework not only accelerates innovation but also nurtures the next generation of semiconductor talent in Singapore, a critical enabler of long-term growth.

Shared Vision for the Future

The FSTD visit represented a shared vision for how deep-tech innovation can contribute to Singapore’s future readiness. By fostering communication between agencies and research centres, Singapore continues to ensure that emerging technologies like GaN are developed responsibly and effectively for high-impact use.

NSTIC (GaN) remains committed to advancing this mission by serving as a bridge between science, strategy, and society, transforming complex research into practical technologies that strengthen national capabilities and global competitiveness.

Final Thoughts

The engagement with the Future Systems and Technology Directorate (MINDEF) reaffirmed the importance of collaboration in shaping Singapore’s semiconductor landscape. NSTIC (GaN) appreciates the opportunity to exchange insights, demonstrate progress, and explore pathways for continued partnership in Gallium Nitride innovation.

Through sustained collaboration and knowledge-sharing, NSTIC (GaN) looks forward to contributing to new milestones within Singapore’s deep-tech ecosystem, driving research, development, and innovation that extend beyond the laboratory and into the technologies of tomorrow.