Type: Journal Publication
Author(s): Yihao Zhuang, Siyu Liu, Pengju Cui, Viet Cuong Nguyen, Qingyun Xie, Ravikiran Lingaparthi, Hanchao Li, Hanlin Xie, Dharmarasu Nethaji, Ameera Nur, Xavier Teo Leng Seah, Marianne Germain, K. Radhakrishnan, and Geok Ing Ng
DOI: 10.1109/LED.2026.3651778
Published In: IEEE Electron Device Letters
Featured in Semiconductor Today: Read the full feature article here.

Abstract:

The latest wide bandgap semiconductor research is pushing the boundaries of what is possible in mobile communication hardware. This study, published in IEEE Electron Device Letters, presents a high-efficiency and low-noise GaN-on-Si HEMT technology specifically engineered for millimetre-wave (mm-wave) mobile transmit and receive (T/R) modules. The research was led by Nanyang Technological University (NTU) Singapore in collaboration with NSTIC (GaN).

At a low drain bias of 10 V, the technology demonstrates a concurrent peak power-added efficiency (PAE) of 62.4 percent and a minimum noise figure (NFmin) of 1.15 dB at 28 GHz. Achieving high efficiency alongside low noise is a significant challenge in RF design. These results represent state-of-the-art performance for GaN-on-Si devices in high-frequency mobile applications. Such benchmarks are essential for developing energy-efficient 5G and 6G infrastructure.

By refining the epitaxial growth, the research team minimised parasitic elements. These elements often hinder high-frequency operation. Therefore, this GaN-on-Si HEMT technology is now a viable solution for monolithic integration in mobile handsets. These findings provide a clear roadmap for engineers. Specifically, they can now maximise data throughput while preserving battery life in mm-wave systems.

In conclusion, this contribution to wide bandgap semiconductor research offers a vital framework for improving high-frequency mobile electronics. By achieving over 60% efficiency at 28 GHz, the team has demonstrated a clear roadmap for next-generation telecommunications.

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