The Mobile World Congress (MWC) 2026 in Barcelona took place from 2–5 March 2026. During this global event, the industry focus shifted toward the next generation of wireless technology. On the opening day, several 6G GaN-on-Silicon milestones were announced. These breakthroughs represent a major step forward for the future of global connectivity.

A key highlight was the success of a joint four-year research programme. NSTIC (GaN) was part of the collaboration in this joint research. We worked alongside teams from NTU Singapore and Soitec. Together, we developed high-performance solutions for the specific demands of 6G networks.

The primary goal was to move 6G technology into everyday devices. Consequently, the research focused on achieving record-breaking efficiency at low voltages. These 6G GaN-on-Silicon milestones address a critical hurdle in making 6G a reality for mobile handsets and wearables.

Technical Highlights: Handset-Ready 6G Performance

Recent results demonstrate that 6G performance is now more practical for battery-powered devices. By using Soitec’s specialised substrates and our advanced 8-inch fabrication capabilities, the team reached record Power Added Efficiency (PAE).

Key technical outcomes shared at MWC 2026 include:

• Record Efficiency: The team reached PAE levels over 50% in the FR3 band (7–24 GHz). Furthermore, efficiency surpassed 60% in millimetre-wave (mmWave) regimes.

• Low-Voltage Operation: High performance was achieved at 3V–6V. Therefore, the technology matches the power constraints of standard mobile batteries.

• Thermal Advantages: These designs offer improved thermal dissipation. In fact, they reduce cooling requirements by up to 30% compared to traditional Gallium Arsenide (GaAs).

• Device Innovation: The collaboration produced three seminal technical papers. These documents detail the performance of GaN High Electron Mobility Transistors (HEMTs).

Detailed technical papers regarding these advancements are available on our Research Publications page.

Supporting the GaN Ecosystem

The latest 6G GaN-on-Silicon milestones show that this platform has good potential to deliver high RF performance. Meanwhile, it retains the cost and scalability advantages of silicon. This combination is essential for the semiconductor industry. As a result, it provides a more energy-efficient alternative to existing technologies.

It is great to see these technical results getting the global attention they deserve at MWC 2026. Congratulations to the teams at NTU and Soitec on a successful announcement in Barcelona. We look forward to seeing this momentum continue as we work together to refine the technologies that will power future networks and support Singapore’s role in global semiconductor innovation.