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Driving RF Innovation: NSTIC (GaN) at The RF Workshop 2026

Driving RF Innovation: NSTIC (GaN) at The RF Workshop 2026

Apr 29 2026

Prof Ng presenting at the RF Workshop 2026.

Following the conclusion of The RF Workshop 2026, held on 24 April 2026 in Brussels, Belgium, NSTIC (GaN) is pleased to share highlights from our participation in this premier industry gathering.

The event was a significant milestone for the RF community, bringing together leading voices from across the semiconductor ecosystem to map out technical and business roadmaps for the next three to five years. It served as a truly global platform for collaboration, featuring participants from over 14 countries and 50 different affiliations.

Discussing GaN-on-Si

A central highlight of the workshop was a session led by Prof. Ng Geok Ing, who represented NSTIC (GaN) as a featured speaker. His presentation explored a pivotal shift in the industry: “mm-wave to sub-THz: What are the opportunities for GaN-on-Si?”

As 5G and 6G technology continues to grow, GaN-on-Si is becoming a more important part of the conversation. Prof. Ng explained how this tech helps meet the high-performance needs of new RF applications. Consequently, it acts as a bridge to reach the high-frequency requirements of the future.

Learning from the Industry

In addition to the presentations, the event was a great chance to see where the industry is heading. Similarly, engaging with global peers from both industry and academia gave us a clear look at new trends. These include better system integration and new ways to use the spectrum.

Moreover, you can find more in-depth technical papers regarding these advancements on our Research Publications page.

Looking Ahead

Furthermore, we want to thank Incize for putting together a very practical and focused event. You can find more information about the program and speakers on the official event page. The perspectives shared in Brussels are invaluable as we continue to push the boundaries of our research.

Ultimately, these discussions highlight the exciting potential of the global RF landscape. We look forward to building on these connections and insights as we continue to advance our research in semiconductor technology.

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