Type: Journal Publication
Author(s): Hanchao Li, Hanlin Xie, Qingyun Xie, Siyu Liu, Yue Wang, Yuxuan Wang, Kumud Ranjan, Yihao Zhuang, Xiao Gong, Geok Ing Ng
DOI: 10.1109/LED.2024.3483888
Published In: IEEE Electron Device Letters, Vol. 45, No. 12, pp. 2315–2318,  Dec. 2024.

Abstract:

Recent innovations in GaN technology are driving the development of next-generation 5G FR2 power amplification. This study, conducted by Nanyang Technological University (NTU) in collaboration with NSTIC (GaN), presents an AlN/GaN/AlGaN double-heterostructure design. Specifically, the research focuses on improving electron confinement and thermal stability. These factors are critical for maintaining performance consistency during low-voltage operations in mobile handsets.

Notably, the optimized epitaxial stack allows the device to achieve a high power density of 1.3 W/mm at only 5 V. Furthermore, this design demonstrates how silicon-based platforms can provide high power efficiency. As a result, this approach offers a cost-effective and scalable solution for 5G front-end modules. Consequently, the findings reinforce the potential of silicon-based GaN technology for future high-frequency applications.

This publication was also featured in Semiconductor Today and Compound Semiconductor Magazine, reflecting its international recognition within the semiconductor research community.

For more details, visit the publication via the DOI link above.

• Semiconductor Today Article

• Compound Semiconductor Magazine (p.59)