On 2 August 2024, NSTIC (GaN) was honoured to host Dr Han Wui Then, Senior Principal Engineer at Intel Foundry Technology Research, for a seminar on 300mm GaN-on-Si technology. The session gathered professionals and researchers keen to explore the latest innovations in power electronics and RF applications, highlighting how GaN-on-Si is redefining performance and efficiency in the semiconductor industry.

Advancements in GaN-on-Si Power and RF Systems

Dr Then presented pioneering research on GaN MOSHEMT transistors, which demonstrated outstanding power and frequency performance. His talk emphasised how 300mm process technologies—drawing inspiration from Moore’s Law—are enabling scalable, cost-effective, and reliable GaN platforms for industrial and communication use.

Among the innovations discussed were high-k metal gates, regrown epitaxial source/drain structures, and copper interconnects. These breakthroughs are setting new industry benchmarks by improving thermal stability, reducing energy loss, and supporting integration with advanced CMOS processes.

Such advancements are critical as 5G and 6G communication networks evolve and as demand for high-efficiency power conversion continues to rise. Dr Then explained how 300mm GaN-on-Si technology bridges performance with manufacturability—paving the way for future systems that are faster, smaller, and more sustainable.

Insights into Scalable Semiconductor Manufacturing

The seminar offered valuable insight into how GaN-on-Si innovations can reshape modern power and RF device development. Dr Then highlighted how Intel’s work on large-diameter GaN wafers has accelerated both research and mass-production readiness.

He also outlined how 3D monolithic integration of GaN and silicon CMOS can deliver greater energy efficiency and compact design. This combination promises wide-reaching applications across wireless infrastructure, aerospace systems, and data centres.

About the Speaker

Dr Han Wui Then is a Senior Principal Engineer at Intel Foundry Technology Research, leading process R&D in GaN electronics and heterogeneous 3D integration. He and his team pioneered the industry’s first 300mm GaN-on-Silicon platform, enhancement-mode GaN MOSHEMT, and 3D monolithic GaN–Si CMOS integration.

A highly decorated researcher, Dr Then has received numerous awards, including the SRC Mahboob Khan Award, the Intel Achievement Award, and the Gregory Stillman Semiconductor Research Award. He has authored more than 60 publications, holds over 150 patents, and actively contributes to international semiconductor conferences.

He earned his Ph.D. in Electrical and Computer Engineering from the University of Illinois at Urbana-Champaign, with previous degrees from Caltech and the National University of Singapore.

Conclusion

Dr Han Wui Then’s seminar showcased the growing importance of 300mm GaN-on-Si technology in powering the next generation of electronics. Through innovations like high-k metal gates, regrown epi structures, and copper interconnects, GaN-on-Si continues to push performance limits in both power electronics and RF systems.

His insights reaffirmed the importance of collaboration and research excellence in advancing semiconductor manufacturing. At NSTIC (GaN), we remain committed to fostering knowledge exchange that drives sustainable innovation across the global semiconductor landscape.