From 8–12 June 2025, NSTIC (GaN) was honoured to participate in the 2025 Symposium on VLSI Technology and Circuits, held in Kyoto, Japan—one of the premier global events for next-generation semiconductors and electronic systems.

As part of a dedicated workshop titled “Revolutionising Electronics with GaN: Opportunities and Challenges”, our team joined leading experts and institutions to explore the transformative role of GaN in RF, power, and high-temperature applications. It was a dynamic forum for exchanging insights and driving deep-tech conversations forward.

A Global GaN Dialogue

The GaN-focused workshop featured speakers from top institutions, including MIT, GlobalFoundries, and research centres from around the world. Topics ranged from material innovation and device scaling to thermal management and CMOS integration—reflecting the complex, interdisciplinary nature of GaN technology development.

This global exchange highlighted both the challenges and enormous potential GaN holds in shaping future electronics.

Showcasing Singapore’s Research Strength

Representing Nanyang Technological University (NTU) and NSTIC (GaN), Prof Geok Ing Ng delivered a keynote presentation on recent advances in RF GaN-on-Si platform development. His talk covered:

• Progress in cost-effective and scalable GaN-on-Si technologies
• Efforts in building CMOS-compatible prototyping and fabrication environments
• The role of national research platforms in accelerating lab-to-market translation
• Validation workflows and ecosystem strategies for real-world deployment in communications and power systems

Prof Ng’s presentation reinforced how Singapore is contributing to the global GaN research landscape through targeted R&D, ecosystem-building, and a strong focus on practical impact.

Translating Research into Scalable Solutions

The symposium reaffirmed the importance of global collaboration in driving GaN innovation. As technologies evolve from concept to commercial readiness, platforms like NSTIC (GaN) are critical in bridging the translation gap through:

• Rapid prototyping for RF and mmWave devices
• CMOS integration and process development
• Cross-sector application development with industry partners

NSTIC (GaN)’s presence at VLSI 2025 reflects our commitment to supporting GaN scalability across high-performance, energy-efficient electronics.

Looking Ahead

We thank the organisers of the 2025 VLSI Symposium and all workshop participants for a truly insightful event. It was a valuable opportunity to engage with global GaN leaders and strengthen collaborative ties across the semiconductor community.

As the semiconductor industry in Singapore continues to evolve, NSTIC (GaN) remains focused on accelerating impactful research and translating GaN innovation into commercially viable technologies for the future.

Stay Connected

Whether you’re a research institute, startup, or industry leader—we welcome your interest in co-developing GaN-based solutions. To explore collaboration or learn more about our facilities, research, or initiatives, get in touch or follow NSTIC (GaN) for updates.