NSTIC (GaN) was honoured to host Dr Farid Medjdoub, Senior Scientist at CNRS-IEMN (France), for a seminar and technical exchange on millimetre-wave and high-efficiency power electronics. The visit provided a valuable platform for sharing insights into the latest developments in GaN technology, including breakthroughs in vertical devices and high-frequency transistor innovation.

Unlocking Innovation in Millimetre-Wave and Vertical GaN

As part of the programme, Dr Medjdoub delivered a seminar to NSTIC (GaN)’s researchers and invited guests. His presentation explored recent progress in GaN-based millimetre-wave transistors and vertical GaN-on-silicon devices, sparking lively discussion on device design and materials engineering.

Key topics included:

• Epilayer engineering for improved material performance and reliability

• Recent advances in GaN HEMTs for RF and mmWave applications

• Development of vertical GaN diodes on silicon with enhanced current and thermal capacity

• Ongoing challenges in thermal management and substrate innovation

His insights underscored how GaN technology continues to address practical challenges in power and RF semiconductor design.

A Closer Look at NSTIC (GaN)’s Capabilities

Following the seminar, Dr Medjdoub toured NSTIC (GaN)’s cleanroom and R&D facilities, where he met with researchers specialising in prototyping, fabrication, and device characterisation.

The demonstrations showcased NSTIC (GaN)’s comprehensive capabilities — from RF switch development to power converter technologies — highlighting its integrated approach to GaN technology research and translation.

Conversations during the tour touched on topics such as vertical device structures, material quality assessment, and thermal interface design, reaffirming the technical synergies between NSTIC (GaN) and CNRS-IEMN.

Strengthening Global Research Ties

Beyond the technical discussions, the visit reinforced the value of scientific exchange in advancing semiconductor innovation. Both teams identified potential areas for future collaboration, including:

• Validation of RF GaN devices for next-generation communication systems

• Joint exploration of vertical GaN-on-silicon architectures

• Collaborative research on substrate engineering and heat management

These discussions reflected a shared commitment to pushing the boundaries of GaN technology through global partnerships and multidisciplinary research.

Looking Ahead

NSTIC (GaN) extends its appreciation to Dr Farid Medjdoub for his visit, valuable insights, and contribution to advancing GaN research dialogue. His participation added depth to NSTIC (GaN)’s ongoing efforts to strengthen collaboration with leading researchers worldwide.

The centre also thanks the NSTIC (GaN) team and attending guests for facilitating meaningful exchanges that support continuous innovation in semiconductor materials and device design.

Stay Connected

NSTIC (GaN) continues to drive advancements in GaN technology for RF, mmWave, and power applications. The centre welcomes collaborations with researchers and partners dedicated to developing next-generation semiconductor solutions.