Held from 3 to 8 November 2024, the Nanyang Technological University (NTU) team, with contributions from the National Semiconductor Translation and Innovation Centre for Gallium Nitride – NSTIC (GaN), proudly represented Singapore at the International Workshop on Nitride Semiconductors (IWN 2024).

With four oral presentations and one poster presentation, the team showcased major progress in gallium nitride semiconductor research. These studies addressed areas that are shaping the future of telecommunications, power electronics, and high-frequency systems.

Key Research Highlights

Our presentations featured several important advancements in GaN devices and materials, including:

• Low-Voltage AlN/GaN/AlGaN-on-Si MISHEMT achieving a record output power density of 1.7 W/mm at 6 V and 30 GHz. This marks a major step forward in efficient low-voltage power amplification.

• First Demonstration of Schottky Barrier Diodes in multi-channel AlN/GaN heterostructures, improving efficiency and scalability in GaN devices.

• Leakage Channel Analysis with varying Al composition back-barriers in AlN/GaN high electron mobility transistors (HEMTs) on Si, offering insights for better material optimisation.

• Characterisation of Deep Region Trapping Effects in AlN/GaN HEMTs with AlGaN back barriers using the tri-state pulsed IV technique. This work enhances the understanding of trapping mechanisms for improved device reliability.

• First Demonstration of GaN-on-Si HEMT for D-Band Power Amplification, a breakthrough enabling future high-frequency communication systems.

These studies collectively highlight Singapore’s growing capabilities in GaN semiconductor innovation.

Collaboration and Global Impact

IWN 2024 brought together researchers, engineers, and industry experts from around the world to exchange ideas and explore new frontiers in semiconductor technology. The event underscored the importance of international collaboration in accelerating scientific progress and turning research into real-world solutions.

For NSTIC (GaN), the discussions helped align research priorities with global trends in telecommunications, satellite communications, and power systems. The knowledge gained will guide ongoing work to make GaN technologies more reliable, efficient, and commercially viable.

Building on Singapore’s Strength in Semiconductor Research

In addition, the participation of NTU and NSTIC (GaN) at IWN 2024 reflected Singapore’s continued growth within the global gallium nitride semiconductor ecosystem. By focusing on power amplification, material optimisation, and device reliability, our researchers are creating solutions that are both energy-efficient and scalable.

Furthermore, these achievements demonstrate the effectiveness of strong collaboration between academia, national research centres, and industry partners. Through this combined effort, Singapore continues to establish itself as a hub for deep-tech and semiconductor innovation.

Looking Ahead

NSTIC (GaN) remains committed to pushing the boundaries of gallium nitride semiconductor research. Our goal is to translate laboratory-scale breakthroughs into scalable technologies that power the next generation of communication and energy systems.

As we continue to expand partnerships and strengthen our ecosystem, we look forward to contributing to Singapore’s leadership in advanced semiconductors and deep-tech innovation.