NSTIC (GaN) was honoured to host Prof Tomás Palacios, the Clarence J. LeBel Professor at the Massachusetts Institute of Technology (MIT) and Director of the Microsystems Technology Laboratories, for a seminar and technical exchange. The visit explored how new materials and architectures are driving progress in integrated micro electronics, enabling smarter, faster, and more sustainable systems.

A Visionary Talk on Future Materials and Devices

During the seminar, Prof Palacios shared key insights from MIT’s groundbreaking research in semiconductor innovation. His presentation covered three main areas:

• GaN FinFET architectures for high-frequency and high-power applications

• Monolayer MoS₂ and other two-dimensional materials for ultra-scaled electronics

• Autonomous microsystems designed for ultra-low energy consumption

These examples illustrated how materials engineering and device design are converging to redefine wireless communication, edge computing, and real-time sensing. Furthermore, Prof Palacios emphasised that the next generation of intelligent systems will depend on combining advanced materials with efficient architectures.

As a result, the seminar offered a clear vision of how research collaboration can accelerate innovation in integrated micro electronics. His integration of theory and practice aligns closely with NSTIC (GaN)’s mission to transform fundamental science into technologies with real-world impact.

Technical Discussions on GaN Process Development

After the seminar, Prof Palacios toured NSTIC (GaN)’s cleanroom and fabrication facilities.
He met with researchers working on RF and power device development and discussed ongoing efforts to enhance process and materials performance.

Key discussion points included:

• Scaling GaN technologies for greater integration and energy efficiency

• Improving process repeatability and material quality in GaN-on-Si and GaN-on-SiC platforms

• Identifying potential MIT–NSTIC collaboration opportunities in RF systems and power conversion

Inspiring Dialogue for Future Collaboration

Prof Palacios’s visit sparked meaningful discussions on connectivity, energy efficiency, and system miniaturisation.
His perspective on emerging materials and autonomous microsystems reinforced NSTIC (GaN)’s ongoing efforts to bridge deep-tech research with real-world applications.

Such exchanges demonstrate NSTIC (GaN)’s broader commitment to progress in integrated micro electronics through international collaboration and open knowledge-sharing.

Looking Ahead

NSTIC (GaN) expresses its sincere appreciation to Prof Tomás Palacios for his visit, his time, and his invaluable insights.
His engagement reaffirmed the importance of global collaboration and intellectual exchange in driving innovation.

We look forward to exploring opportunities for joint research that supports the development of next-generation GaN systems for RF and power applications.

Stay Connected

At NSTIC (GaN), we believe the future of microelectronics depends on scientific excellence, practical relevance, and strong partnerships.
We will continue working with leading researchers and academic institutions worldwide to transform groundbreaking ideas into real-world technologies.