Technical Committee

Dr Subramaniam Arulkumaran received the PhD degree on GaAs bulk-growth and its characteristics from Anna University(India) in 1997. Part of the PhD work was done at the Institute of Crystal Growth, Germany. In 1997, he started GaN research at Nagoya Institute of Technology, Japan and published several papers. He has gained industry experience from Motorola Semiconductors for 1.5 years. In March 2005, he joined as a Senior Research Scientist and continued the III-Nitride research activities at Temasek Laboratories(TL), Nanyang Technological University(NTU), Singapore and made major contributions on the Development of GaN technology on Sapphire, Silicon and SiC substrates. He is currently a Senior Principal Research Scientist with TL@NTU and leading the Microsystems Technology Development Centre (MTDC). From Dec 2016, he received honorary “Visiting Professor” position from Nagoya University(NU), Japan. His current research interests are III–V Electronics, Optoelectronics and III–Nitride Devices and its Circuits.

He has authored or co-authored over 250 papers in journals and conferences and two book chapters on GaN materials and Devices. He has filed 18 technology disclosures at NTU. He demonstrated (I) world’s first microwave GaN HEMTs on 8-inch Si(111) and (ii) record-high performance from GaN Fin-HEMTs by stress engineering. He has co-advised several post- and under-graduate students. He did several collaborations with universities/companies: NIT(Japan), KTH(Sweden), Ohio-state University(USA), University of Bristol(UK), GNS Science(New Zealand) and AIXaTECH GmbH(Germany). He has collaborated with Prof. Hiroshi Amano(Nobel Laureate) and published papers. Fifteen of his publications were featured in international magazines.

He is a recipient of (i)DAAD research fellowship (1996) from German Academic Exchange Service, Germany, (ii)JSPS postdoctoral fellowship (1999) from Japan Society for the Promotion of Science(JSPS), Japan and (iii)Singapore National Day Award: Commendation Medal (PingatKepujian) (2016) from MOE, Singapore. For the development of MMIC, he is a Corecipient of Defense Technology Prize (DTP) (2007) (Team Award) from MINDEF, Singapore.