Type: Conference Paper
Date Presented: November 2024
Author(s): H. Li et al.
Conference: 12th International Workshop on Nitride Semiconductors (IWN)

Abstract:

5G technology infrastructure demands high power density and efficiency at millimetre-wave frequencies to support expanding data rates. This paper reports the development of a low-voltage AlN/GaN/AlGaN-on-Si metal–insulator–semiconductor high-electron-mobility transistor (MISHEMT) that achieves a record output power density (Pout) of 1.7 W/mm at 30 GHz. Specifically, the research explores advanced epitaxial design and interface optimisation to enhance transconductance and thermal stability.

Notably, the study demonstrates how these interface refinements lead to superior breakdown behavior and power efficiency. By utilizing silicon substrates, the research proves that high-performance GaN devices can be produced as a cost-effective, scalable solution compared to traditional GaN-on-SiC architectures. Furthermore, these findings provide a foundational step for the next generation of front-end modules in wireless networks.

Consequently, the study contributes significantly to the evolution of low-voltage GaN device engineering. In conclusion, the results presented at IWN 2024 by H. Li et al. highlight the potential of these devices to transform 5G technology performance. These breakthroughs align with the innovation mission of NSTIC (GaN) and our commitment to advanced foundry services in Singapore.

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