Type: Conference Paper
Date Presented: 6-11 July 2025
Author(s): Y. Zhuang et al.
Conference: 15th International Conference on Nitride Semiconductors (ICNS)

Abstract:

Vertical scaling is now a critical component of the modern semiconductor fabrication process. This study investigates AlN/GaN/AlGaN HEMTs on silicon with an aggressively scaled 80 nm GaN channel. The research was presented at the 15th International Conference on Nitride Semiconductors (ICNS-15). It focuses on how reduced channel thickness influences device stability and power density. By comparing continuous-wave (CW) and pulsed operation, the authors evaluate the limits of this structural design.

The work provides a detailed look at the trade-offs within the semiconductor fabrication process. Improved electrostatic control often comes at the cost of increased thermal resistance. The study uses electrical characterisation to map these thermal behaviours in ultrathin channels. These insights help engineers manage heat dissipation while maintaining high current density. Such data is vital for creating compact, energy-efficient electronics.

In conclusion, this investigation confirms the potential of scaled GaN-on-Si technology for high-frequency use. Refining the semiconductor fabrication process for thinner channels is essential for 5G and radar systems. This work aligns with the innovation mission of NSTIC (GaN) and our commercial foundry services in Singapore.

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