Type: Journal Publication
Author(s): Siyu Liu, Yihao Zhuang, Hanchao Li, Pengju Cui, Qingyun Xie, Yue Wang, Hanlin Xie, Kumud Ranjan, Geok Ing Ng
DOI: 10.1002/pssa.202400983
Published In: physica status solidi (a), vol. 222, no. 3, pp. 2400983 (2025)

Abstract:

Gallium nitride semiconductor reliability depends heavily on the mitigation of parasitic conduction paths that can compromise high-power transistor performance. This study investigates leakage channel behaviour in AlN/GaN high-electron-mobility transistors (HEMTs) on silicon featuring varying aluminium compositions in the back-barrier layer. Specifically, the research evaluates how compositional tuning influences carrier confinement and overall device stability through rigorous structural and electrical analyses.

Notably, the findings reveal that optimising aluminium concentration can effectively suppress parasitic conduction. Published in physica status solidi (a), the study provides a clear pathway to improving HEMT designs for high-frequency and power applications. Furthermore, the results contribute to a clearer understanding of back-barrier engineering and charge transport mechanisms within the device layers.

As a result, this work supports the continued progress of reliable and scalable technologies based on the gallium nitride semiconductor. In conclusion, the structural insights gained here are vital for reducing energy loss in next-generation power converters.

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