Type: Conference Paper
Date Presented: November 2024
Author(s): H. Li et al.
Conference: 12th International Workshop on Nitride Semiconductors (IWN)

Abstract:

High-frequency electronics are currently undergoing a major shift as researchers push toward the sub-terahertz D-band for 6G and satellite applications. This paper presents the first demonstration of GaN-on-Si high-electron-mobility transistors (HEMTs) designed specifically for D-band power amplification. Specifically, the research explores aggressive device scaling and material engineering to enhance electron transport at these ultra-high frequencies. The study proves that GaN-on-Si is a viable, cost-effective platform for the next generation of wireless hardware.

Notably, the results achieve promising performance levels that advance our understanding of GaN capabilities within the 110–170 GHz range. Furthermore, the epitaxial refinement techniques used in this study provide a roadmap for achieving higher power density in the millimetre-wave spectrum. As a result, these findings contribute significantly to the evolution of high-efficiency transistor technologies. Consequently, this work provides a foundational step for future high-frequency electronics used in high-capacity communication systems. In conclusion, the findings presented at IWN 2024 by H. Li et al. align with the innovation goals of NSTIC (GaN) and our commercial foundry services.

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