Type: Conference Paper
Date Presented: 22-23 September 2025
Author(s): Y. Zhuang et al.
Conference: 20th European Microwave Integrated Circuits Conference (EuMIC), pp. 218–221 DOI: 10.23919/EuMIC65284.2025.11234335

Abstract:

Advancements in wide-bandgap technologies are driving the development of energy-efficient mobile front-end systems. This paper, presented at the 20th European Microwave Integrated Circuits Conference (EuMIC), explores AlN/GaN/AlGaN-on-Si HEMT technology. The research focuses on millimetre-wave (mm-wave) applications requiring low-voltage, high-power, and low-noise performance. This balance is achieved through an optimised heterostructure design that prioritises electron mobility and carrier confinement.

The study demonstrates how refined epitaxial stacks improve noise control without sacrificing output power. By using GaN-on-Si platforms, the researchers provide a scalable solution for monolithic front-end integration. Such developments are crucial for compact next-generation wireless communication networks. These findings underscore the versatility of wide-bandgap technologies in meeting the strict thermal and power constraints of modern mobile hardware. The team utilised thin AlN barrier layers to enhance the transconductance of the device, which is a critical factor for high-frequency gain.

Furthermore, the integration process addresses the challenges of substrate-related parasitics common in silicon-based HEMTs. By implementing advanced buffer layers, the research significantly reduces leakage and improves the breakdown voltage under low-drain-bias conditions. These results prove that GaN-on-Si is no longer just a research curiosity but a viable alternative for high-volume consumer electronics.

In conclusion, this research proves the feasibility of cost-effective GaN platforms for high-frequency mobile use. Refined GaN-on-Si semiconductor materials are essential for future 5G and 6G infrastructure.

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