Type: Journal Publication
Author(s): Hanchao Li, Yue Wang, Qingyun Xie, Hanlin Xie, Hui Teng Tan, Pradip Dalapati, Siyu Liu, Kumud Ranjan, Siewchuen Foo, Subramaniam Arulkumaran, Chee Lip Gan, Geok Ing Ng
DOI: 10.35848/1882-0786/ada2d8
Published In: Applied Physics Express, Vol. 18, No. 1, 016502 (2025)

Abstract:

Power electronics technology is evolving rapidly through the implementation of multi-channel heterostructures that provide enhanced current density and reduced resistance. This publication highlights the development of multi-channel AlN/GaN Schottky barrier diodes (SBDs) grown via MOCVD to evaluate their scalability for high-frequency applications. Specifically, the team utilised a five-channel heterostructure to strengthen carrier confinement and significantly lower sheet resistance compared to conventional single-channel designs.

Notably, the electrical characterisation conducted in this study examines the transport contributions from both thermionic emission and tunnelling. Published in Applied Physics Express, the research establishes a clear link between epitaxial configuration and improved forward and reverse characteristics. Furthermore, the findings offer a practical roadmap for developing manufacturable AlN/GaN diode platforms that maintain robust breakdown behaviour under stress.

As a result, this study provides critical insights into channel stacking, ohmic contact formation, and the trap-related effects that influence wide-bandgap diode performance at high temperatures. In conclusion, the work by H. Li et al. demonstrates how structural innovation continues to push the limits of power electronics technology.

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