Type: Conference Paper
Date Presented: 01-04 December 2024
Author(s): Geok Ing Ng, Hanlin Xie, Hanchao Li
DOI: 10.1109/TENCON61640.2024.10902922
Conference: TENCON 2024 – IEEE Region 10 Conference (TENCON), pp. 450–453

Abstract:
This invited paper presents advancements in radio-frequency GaN-on-Si high-electron-mobility transistor (HEMT) technology aimed at supporting future high-frequency communication systems. The research outlines progress in epitaxial growth, device design, and material optimisation to enhance power efficiency and linearity while maintaining cost-effective scalability on silicon substrates.

By addressing the performance and manufacturability balance between GaN-on-Si and GaN-on-SiC platforms, the work highlights the feasibility of GaN-on-Si for next-generation RF applications, including 5G and beyond. The findings contribute to a deeper understanding of GaN device integration, thermal management, and frequency response, reinforcing the technology’s role in enabling compact, high-performance communication front-end modules.

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