Type: Conference Paper
Date Presented: November 2024
Author(s): Y. Zhuang et al.
Conference: 12th International Workshop on Nitride Semiconductors (IWN)

Abstract:

Precision in semiconductor fabrication is necessary to mitigate internal trapping mechanisms that hinder device performance. This paper investigates deep region trapping effects in AlN/GaN high-electron-mobility transistors (HEMTs) incorporating an AlGaN back barrier. Specifically, the study utilizes a specialized tri-state pulsed IV measurement technique to observe charge behavior under realistic operating conditions. The research analyzes trapping and detrapping processes within the buffer region. Notably, these effects reveal a significant influence on dynamic on-resistance and transient current collapse.

Furthermore, by examining trap characteristics, the research identifies their dependence on bias and temperature conditions. This analysis provides a deeper understanding of charge transport mechanisms. As a result, the insights gained are valuable for improving the reliability of the semiconductor fabrication process. Consequently, the study contributes to the development of more stable and efficient GaN-based power and RF technologies. In conclusion, the findings presented at IWN 2024 by Y. Zhuang et al. support the advanced research goals of NSTIC (GaN) and our commercial foundry services.

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