Type: Journal Publication
Author(s): Pradip Dalapati, Subramaniam Arulkumaran, Hanlin Xie, Geok Ing Ng
DOI: 10.1063/5.0252966
Published In: Applied Physics Letters, Vol. 126, 111604 (2025)

Abstract:

An advanced semiconductor fabrication process is essential for maintaining the performance of AlN/GaN metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs) under thermal stress. This study investigates how the integration of in situ SiNₓ gate dielectrics, combined with ex situ SiNₓ gate dielectrics combined with ex situ Al₂O₃ surface passivation, enhances device robustness. By examining these dual-passivation strategies, the research evaluates their impact on interface stability, leakage suppression, and current reliability at elevated temperatures.

The results indicate that refining the semiconductor fabrication process to include both in situ and ex situ treatments effectively mitigates charge trapping. This methodology prevents thermally induced degradation, which often compromises the consistency of wide-bandgap electronics. Published in Applied Physics Letters, the findings contribute to a more sophisticated understanding of thermal reliability engineering, advancing the suitability of MIS-HEMTs for high-power and high-temperature environments.

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