Type: Conference Presentation (Invited Talk)
Date Presented: 6-11 July 2025
Author(s): Geok Ing Ng
Conference: 15th International Conference on Nitride Semiconductors (ICNS)

Abstract:

Modern semiconductor manufacturing is central to the global rollout of 5G and 6G communication systems. This invited talk, presented at the 15th International Conference on Nitride Semiconductors (ICNS-15), examines recent progress in GaN-on-Si electronics. Professor Ng Geok Ing discusses critical advancements in epitaxial growth and device integration. These developments aim to improve both performance and cost efficiency at scale.

The presentation focuses on the shift from laboratory research to high-volume semiconductor manufacturing. Bridging this gap requires solving challenges in high-frequency thermal management and system-level integration. As global demand for faster data grows, the role of GaN innovation becomes increasingly vital. The talk highlights how scalable production models are making energy-efficient communication infrastructures possible.

In conclusion, the insights from ICNS-15 reflect the maturing state of GaN-on-Si manufacturing processes. Moving these technologies into the mainstream is essential for future connectivity. This work aligns with the innovation mission of NSTIC (GaN) and our commercial foundry services in Singapore.

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