Type: Magazine Article
Publication: SSIA VOICE Magazine Vol. 41
Date Published: November 2025

Abstract:

Establishing global GaN leadership requires a fundamental rethink of how the semiconductor industry approaches material innovation. In this feature for SSIA VOICE Magazine Vol. 41, Professor Ng Geok Ing discusses the transition from silicon to Gallium Nitride. He explores how GaN is becoming the essential material for next-generation systems. The article presents a clear vision of the strategic shifts guiding Singapore’s emergence as a major player in the evolving wide-bandgap landscape.

The move beyond silicon is not just a technical change but a move toward sustainable GaN leadership. Professor Ng emphasizes that capability development and specialized foundry services are the pillars of this transition. By focusing on advanced fabrication and local expertise, Singapore is strengthening its position in the global supply chain. The article highlights that the future of high-frequency and high-power electronics depends on our ability to scale these new materials effectively.

Furthermore, the discussion underscores the importance of a collaborative ecosystem. This involves bridging the gap between research breakthroughs and commercial production. By fostering partnerships between academia and industry, Singapore can maintain its competitive edge in the GaN age. The leadership strategies discussed here provide a vital roadmap for navigating the complexities of the wide-bandgap revolution.

In conclusion, the leap beyond silicon marks a defining moment for the semiconductor industry. Investing in the next generation of talent and facilities is the only way to secure long-term GaN leadership. This strategic vision aligns with the innovation mission of NSTIC (GaN) and our foundry services in Singapore.

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