Type: Conference Paper
Date Presented: 6-11 July 2025
Author(s): S. Liu et al.
Conference: 15th International Conference on Nitride Semiconductors (ICNS)

Abstract:

Achieving precise threshold voltage modulation is a significant hurdle in developing high-performance depletion- and enhancement-mode GaN devices. This study, presented at the 15th International Conference on Nitride Semiconductors (ICNS-15), examines MIS-HEMTs on silicon using an ultra-thin 1.3 nm AlN barrier. The research highlights how passivation engineering enables broad control over the threshold voltage. Crucially, this process does not compromise channel integrity or device reliability.

The team explored material interactions within the AlN/GaN system. This work provides new insights into interface charge behaviour. This level of electrostatic design is vital for scalable GaN-on-Si platforms. By managing surface conditions, the researchers achieved a wider tuning range than previously reported.

In conclusion, these findings advance threshold voltage modulation for flexible, energy-efficient electronics. The technique supports the next generation of high-performance power and RF applications. This work aligns with the innovation mission of NSTIC (GaN) and our commercial foundry services in Singapore.

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