Type: Journal Publication
Author(s): Hanchao Li, Qingyun Xie, Zhongzhiguang Lu, Hanlin Xie, Yihao Zhuang, Siyu Liu, Yuxuan Wang, Yue Wang, Kumud Ranjan, Xiao Gong, Yuanjin Zheng, Geok Ing Ng
DOI: 10.1109/LED.2025.3591141
Published In: IEEE Electron Device Letters, Vol. 46, No. 10, pp. 1749–1752, Oct. 2025.

Abstract:

This paper presents the demonstration of a GaN-on-Silicon High Electron Mobility Transistor (HEMT) achieving 0.67 W/mm output power density at 10 V within the D-band frequency range. The research highlights the potential of GaN-on-Si technology for compact, energy-efficient, and high-frequency power amplification.

Developed through collaboration between NTU and NSTIC (GaN) researchers, this work focuses on the structural refinements needed for high-frequency operation. These findings strengthen the foundation for future RF and power applications. By pushing the limits of current densities at 10 V, the study proves that silicon-based GaN platforms can compete in the millimetre-wave spectrum.

In conclusion, this contribution to wide bandgap semiconductor research supports the development of a robust telecommunication infrastructure. The ability to achieve high power density on silicon substrates is a major step forward for cost-effective GaN electronics. This work aligns with the innovation mission of NSTIC (GaN) and our commercial foundry services in Singapore.

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