Type: Conference Paper
Date Presented: 6-11 July 2025
Author(s): H. Li et al.
Conference: 15th International Conference on Nitride Semiconductors (ICNS)

Abstract:

Advancements in wide-bandgap technologies are essential for the future of high-frequency satellite communications. This study, presented at the 15th International Conference on Nitride Semiconductors (ICNS-15), showcases high-performance AlN/GaN MIS-HEMTs. These devices are specifically optimised for the Ka-band. The research highlights how structure refinement and surface passivation achieve ultra-low noise characteristics. These techniques also enhance electron transport while effectively suppressing trapping effects.

The study balances low-noise operation with high power density. Such a combination is vital for next-generation communication platforms. By engineering the device noise levels, the researchers demonstrate the scalability of wide-bandgap technologies. These findings provide a path toward more efficient aerospace and satellite systems. The results underscore the importance of precision engineering in high-frequency semiconductor design. In conclusion, this work proves the potential of AlN/GaN MIS-HEMTs for modern RF infrastructure. Continued innovation in wide-bandgap semiconductor materials ensures that communication systems can meet rising data demands. This research aligns with the innovation mission of NSTIC (GaN) and our commercial foundry services in Singapore.

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