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Rohde & Schwarz and NSTIC (GaN) Kick Off Joint GaN MMIC Development Initiative

Rohde & Schwarz and NSTIC (GaN) Kick Off Joint GaN MMIC Development Initiative

Aug 20 2025

NSTIC (GaN) and Rohde & Schwarz kick off GaN MMIC collaboration in Munich

Following the signing of our Research Collaboration Agreement (RCA) at the official launch of NSTIC (GaN), we were pleased to meet with our partners at Rohde & Schwarz in Munich for the kickoff of our joint GaN MMIC development initiative.

This collaboration aligns NSTIC (GaN)’s research capabilities with Rohde & Schwarz’s global expertise in test and measurement. Together, both teams aim to co-develop next-generation Gallium Nitride (GaN) Monolithic Microwave Integrated Circuits (MMICs) designed for high-frequency precision instruments.

These components will power the next wave of radio frequency and mmWave test platforms, delivering higher efficiency, greater output power, and improved linearity in mission-critical systems.

Aligning Technical Strengths

The kickoff meeting in Munich provided an opportunity for both teams to align on project direction, technical priorities, and delivery milestones.

Key discussion points included:

  • Defining performance specifications for the GaN MMICs based on real-world application needs

  • Exploring integration and packaging strategies for better thermal management and miniaturisation

  • Establishing validation frameworks to ensure device robustness across various test scenarios

  • Outlining responsibilities across device development, characterisation, and system-level integration

NSTIC (GaN) will lead efforts in materials growth, device simulation, and wafer prototyping. Rohde & Schwarz will contribute expertise in application-specific design, system testing, and market-readiness requirements.

Bridging Research and Application

This initiative demonstrates NSTIC (GaN)’s focus on bridging deep-tech research with industrial application.

While GaN is already known for its use in wireless communications, radar, and power electronics, its potential in precision measurement systems remains largely untapped. Realising this potential requires close coordination across the value chain — from materials science to system deployment.

Through this partnership, research outcomes are translated into practical, real-world solutions. By collaborating with an industry leader like Rohde & Schwarz, NSTIC (GaN) ensures its GaN research contributes not only to scientific knowledge but also to the development of tools and systems that make a tangible impact.

Shared Vision and Long-Term Value

This project represents more than a technical milestone. It reflects a shared commitment to advancing future-ready electronics through sustainable collaboration.

The GaN MMICs developed under this initiative are expected to form the foundation of next-generation radio frequency test platforms. They will support applications across telecommunications, aerospace, defence, and other high-performance sectors.

With a focus on scalability, performance, and reliability, these innovations are designed to meet current needs while preparing for tomorrow’s technology landscape.

Final Thoughts

With alignment established, both teams are now progressing through the early stages of design, validation, and collaborative development. The project marks an important step in advancing GaN technology for high-frequency and radio frequency applications.

NSTIC (GaN) and Rohde & Schwarz share a common vision — to push the boundaries of performance and reliability in semiconductor innovation. This collaboration underscores how partnerships between research and industry can accelerate technological progress with long-term impact.

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