Prof Geok Ing Ng, Executive Director of NSTIC (GaN), was invited to speak at the 15th International Conference on Nitride Semiconductors (ICNS-15), held in Malmö, Sweden, from 6–11 July 2025.
As one of the world’s leading forums for III-nitride research, ICNS-15 gathered experts to discuss breakthroughs in materials science, device engineering, and emerging applications across wireless communication, power electronics, optoelectronics, and quantum technologies. Prof Ng’s session reflected Singapore’s growing contribution to the gallium nitride semiconductor field and its role in advancing future-ready infrastructure.

GaN-on-Si for the Next Generation of Wireless

Prof Ng delivered a presentation titled “RF-Millimetre Wave GaN-on-Si Electronics for Future 5G/6G Communications.”
His talk highlighted NSTIC (GaN)’s latest work in high-frequency wireless solutions and explored:

• Design and optimisation of GaN HEMTs on silicon for RF and mmWave applications

• Enhancements in thermal management and substrate reliability for high-power devices

• Strategies to balance cost and performance for scalable, commercially viable GaN-on-Si platforms

• Energy-efficient approaches supporting the demands of 5G, 6G, and ultra-fast connectivity

The presentation demonstrated how Singapore, through national initiatives like NSTIC (GaN), contributes to global advances in gallium nitride semiconductor research and innovation.

Building Global Bridges in Semiconductor Innovation

Prof Ng’s participation at ICNS-15 emphasised the importance of international collaboration in tackling the complex challenges of semiconductor development.
From achieving higher power densities and faster signal speeds to building more sustainable device architectures, gallium nitride semiconductor technologies remain central to the evolution of next-generation systems.

NSTIC (GaN)’s mission—to connect research outcomes with industry applications—aligned closely with the conference’s focus on impact and translation. The event also facilitated dialogue on potential collaborations in GaN-on-SiC integration, RF packaging, and advanced device design.

Shaping the Future of GaN Innovation

More than just a conference milestone, NSTIC (GaN)’s presence at ICNS-15 underscored the momentum behind GaN research and the collective effort needed to scale breakthroughs into real-world solutions.

We thank the organisers of ICNS-15 for the opportunity to contribute and engage. It was a meaningful platform to represent Singapore’s semiconductor capabilities and explore new possibilities for international R&D exchange.

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As we continue pushing boundaries in RF and mmWave GaN research, NSTIC (GaN) welcomes partnerships with those working at the frontier of semiconductor technology. To explore collaboration, access research updates, or learn more about our work—follow us or reach out directly.